The BC846BLT1G is a general-purpose NPN silicon bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It comes in a small SOT-23 surface-mount device (SMD) package, making it suitable for compact and high-density electronic designs.
Pin Configuration:
Emitter
Base
Collector
Key Characteristics:
DC Current Gain (hFE): Typically ranges from 110 to 800.
Transition Frequency (fT): 100MHz
Collector-Emitter Saturation Voltage (Vce(sat)): 250mV
Noise Figure: 4dB
Features:
High DC Current Gain
Low Saturation Voltage
High Transition Frequency
Suitable for surface-mount applications
Low Noise
Note: Product images are for illustrative purposes only and may differ from the actual product.
| Type | NPN Transistor |
|---|---|
| Collector-Emitter Voltage (Vce) | 65V |
| Collector-Base Voltage (Vcbo) | 80V |
| Emitter-Base Voltage (Vebo) | 6V |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Ptot) | 310mW |
For official government agricultural guidelines, scheme updates, and research initiatives, please visit the National Agriculture Portal. Click here →





