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F4N65 N-Channel 650V 4A Power MOSFET - TO-220 Package is a high-voltage N-channel enhancement mode power MOSFET designed for switching power supplies, LED drivers, battery chargers, adapters, inverters, and other high-frequency power switching applications. Featuring a 650V drain-source voltage, 4A continuous drain current, low ON resistance, fast switching performance, and high avalanche capability, it provides reliable and efficient operation in demanding power circuits.
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1 x F4N65 N-Channel 650V 4A Power MOSFET - TO-220 Package
| Product Type | N-Channel Power MOSFET |
|---|---|
| Model | F4N65 |
| Drain-Source Voltage (VDS) | 650V |
| Continuous Drain Current (ID) | 4A |
| Pulsed Drain Current (IDM) | 8A |
| Gate-Source Voltage (VGS) | ±30V |
| Drain-Source ON Resistance (RDS(on)) | 2.6Ω Max @ VGS = 10V |
| Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Power Dissipation (PD) | 32W |
| Single Pulse Avalanche Energy (EAS) | 173mJ |
| Operating Junction Temperature | -55°C to +150°C |
| Storage Temperature | -55°C to +150°C |
| Thermal Resistance (Junction to Case) | 4°C/W |
| Package Type | TO-220 |
| Mounting Type | Through Hole (THT) |
| Polarity | N-Channel |
| Compliance | RoHS |
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