
The S85502TY is a versatile PNP bipolar junction transistor (BJT) designed for a variety of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for low to medium power switching and signal amplification tasks.
Features
Package Includes:
1 x S8550 2TY PNP Transistor – SOT23
| Collector-Emitter Voltage (Vce) | -25V |
|---|---|
| Collector-Base Voltage (Vcb) | -40V |
| Emitter-Base Voltage (Veb) | -5V |
| Collector Current (Ic) | -1.5A |
| Power Dissipation (Pd) | 300mW |
| DC Current Gain (hFE) | 110-300 at Ic = -1mA |
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